TPN7R006PL,L1Q
Toshiba Semiconductor and Storage
Deutsch
Artikelnummer: | TPN7R006PL,L1Q |
---|---|
Hersteller / Marke: | TAEC Product (Toshiba Electronic Devices and Storage Corporation) |
Teil der Beschreibung.: | MOSFET N-CH 60V 54A 8TSON |
Datenblätte: | None |
RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
---|---|
1+ | $0.91 |
10+ | $0.81 |
100+ | $0.6314 |
500+ | $0.5216 |
1000+ | $0.4118 |
2000+ | $0.3844 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 2.5V @ 200µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 8-TSON Advance (3.1x3.1) |
Serie | U-MOSIX-H |
Rds On (Max) @ Id, Vgs | 7mOhm @ 27A, 10V |
Verlustleistung (max) | 630mW (Ta), 75W (Tc) |
Verpackung / Gehäuse | 8-PowerVDFN |
Paket | Tape & Reel (TR) |
Betriebstemperatur | 175°C |
Produkteigenschaften | Eigenschaften |
---|---|
Befestigungsart | Surface Mount |
Eingabekapazität (Ciss) (Max) @ Vds | 1875 pF @ 30 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain-Source-Spannung (Vdss) | 60 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 54A (Tc) |
Grundproduktnummer | TPN7R006 |
TOSHIBA QFN
MOSFET N CH 30V 27A 8TSON-ADV
TOSHIBA 8-TSON3.3X3.3
MOSFET N CH 30V 20A 8TSON-ADV
TOSHIBA QFN
TOSHIBA NA
TOSHIBA QFN
Replacement for Perkins TPN771 A
MOSFET N-CH 40V 38A 8TSON
TOSHIBA SOP-16
MOSFET N-CH 60V 26A 8TSON
TPN6R303NC TOSHIBA
TOSHIBA 8-TSON3.3X3.3
2024/06/6
2024/04/18
2024/04/13
2023/12/20
![]() TPN7R006PL,L1QToshiba Semiconductor and Storage |
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